• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A device for avoiding flashovers in the high-voltage testing of semiconductor components (chips 10) on semiconductor wafers (5) comprises a pressure chamber (7) which can be delivered sealingly to the semiconductor wafer (5) with a pressurized gas supply (8), so that the interior (9) of the pressure chamber (7) placed under pressure and so the ignition voltage for a sparkover between contact surfaces (1, 2) is higher than the maximum test voltage to be applied. The pressure chamber (7) is connected to a needle card (12) with contact needles (3). The pressure chamber (7) has a movable part (13) which is movable relative to the needle card (12) connected parts (11 and 11 ') of the pressure chamber (7). The movable part (13) of the pressure chamber (7) is held by an air bearing in the gap (14) between the pressure chamber (7) and the semiconductor wafer (5) sealingly spaced from the surface of the semiconductor wafer (5).
    公开号:AT511226A1
    申请号:T371/2011
    申请日:2011-03-17
    公开日:2012-10-15
    发明作者:Rainer Dr Gaggl
    申请人:Rainer Dr Gaggl；
    IPC主号:
    专利说明:

    The invention relates to a device for high voltage testing of semiconductor devices having the features of the introductory part of claim 1.
    Within the scope of the invention, both semiconductor devices (hereafter referred to as " chip ") not yet removed from semiconductor wafers (broken out) and semiconductor chips already separated out from semiconductor wafers are contemplated.
    In electrical testing of semiconductor devices, high voltage devices such as high voltage devices are used. High-voltage transistors, IGBTs or diodes, tested for their dielectric strength by applying high voltage. In this case, the chips that are not yet installed in a housing and, for example, still lying against each other (not isolated) are in a semiconductor wafer, charged via test contacts on the contact surfaces of the chip front side and a conductive support plate on the back of the chip with electrical high voltage and the electrical properties, such as the leakage current with locked component, measured.
    Depending on the chip geometry and the level of the test voltage between contact surfaces on the chip, such high electrical field strengths can occur during this testing that undesired (spark) flashovers occur between contact surfaces and via the atmosphere (air). The lying next to the chip to be tested, contacted, more chips on a semiconductor wafer are usually not contacted on the front side of the chip, so that in these no flashovers occur.
    From AT 412 175 B an arrangement is known with which arcing in high voltage testing can be avoided by performing the measurement under elevated gas pressure. The AT 412 175 B takes advantage of the fact that the
    Rippling field strength depends on the gas pressure, the spark ignition voltage of the spark increasing with increasing gas pressure. In the case of the device known from AT 412 175 B, the chip subjected to high voltage is exposed during the measuring process as a whole or partially, at least in the areas which are at risk of overheating, to an increased gas pressure (for example increased air pressure). If the gas pressure is sufficiently high, the sparking voltage of the spark overshoot can be increased above the maximum test voltage applied to the test object, and arcing on the chip can be effectively suppressed. In AT 412 175 B, a pressure chamber is used, which is placed on the semiconductor device under test (e.g., the chip). The unilaterally open pressure chamber is closed by placing on the semiconductor device and constructed in the pressure chamber via a compressed gas supply via the test specimen overpressure.
    The electrical contact of the device under test is usually carried out by means of resilient contact probes ("probes"), which are usually mounted on a printed circuit board for supplying the electrical signals. Such a contacting device is also referred to as a probe card (" card "). The combination of a probe card with a pressure chamber in a device for high voltage testing of semiconductor devices, which is generally addressed in AT 412 175 B, is technically demanding in that on the one hand the test contacts are pressed against the contact surfaces of the semiconductor device with contact deliveries of a few lpm (typically about 75 p.m.) Furthermore, the pressure chamber must be brought exactly to the semiconductor device in order to achieve a sufficiently secure sealing between the semiconductor device and the pressure chamber.
    Due to wear of the test probes during series testing of semiconductor devices, a position selected once is changed soon, so that the pressure chamber already before the contact tips.. Is placed on the semiconductor device and finally the electrical contact to the contact tips is insufficient due to insufficient contact pressure of the contact tips. In many cases, a contact between the pressure chamber and the semiconductor device is not desirable because it because of in the region of the interface between the pressure chamber and semiconductor device impurities present (eg, particles that may result from semiconductor wafer fractures) to damage the semiconductor device (chip), no matter whether this already has been cut out of the semiconductor wafer or not, can come.
    The invention has for its object to make a device such as is known from AT 412 175 B and described above, so on that a combination of pressure chamber with a probe card in an advantageous manner possible.
    This object is achieved according to the invention with a device having the features of claim 1.
    Preferred and advantageous embodiments of the invention are the subject of the dependent claims.
    In the invention, the pressure chamber, which is combined with a needle card, at least one connected to the needle card and against this non-movable part and at least one perpendicular to the needle card relative to the needle card movable, serving as a ring seal part. Thus, when the contacts of the probe card are fed with their (at least one) movable part, the pressure chamber can follow movements of the semiconductor component (chip or semiconductor wafer).
    The movable ring seal, that is, the at least one movable part of the pressure chamber of the device according to the • · · · · · · · · ♦
    4 of the present invention, may follow changes in contact delivery and also compensate for wear on the contacts of the probes. Thus, it is always possible to close the pressure chamber with respect to the semiconductor component correctly.
    In one embodiment of the invention, the movable part (ring seal) of the pressure chamber is biased by springs in the direction toward the semiconductor device on which the pressure chamber is to be applied, thus reliably establishing a seal between the pressure chamber and the semiconductor device. It is in the hands of the danger of damaging the semiconductor wafer or the chip by particles (see above) to reduce by appropriate choice of the spring force of the spring used.
    In one embodiment of the invention, it is provided that the seal between the pressure chamber and the semiconductor component takes place with the aid of a gas (air) bearing. In this way, the movable part of the pressure chamber (ring seal) is suspended over the surface of the semiconductor device (semiconductor wafer or chip). Gas bearings, as used here, have the property of building high bearing forces as the gap narrows, thus counteracting a (further) narrowing of the gap. Thus, touches between the ring seal and the surface of the semiconductor device (wafer surface) and thus the risk of damage to the semiconductor device can be avoided with reliability.
    In a further embodiment of the device according to the invention, it is ensured that the target pressure is built up in the pressure chamber before the beginning of the high-voltage test. This reliably prevents flashovers that under certain circumstances go unnoticed and that could endanger the semiconductor component later on. ♦ « · ♦ «· · ♦ * # 5 can. In order to monitor the pressure build-up in the pressure chamber, the device according to the invention, in particular its pressure chamber, an electric pressure sensor or pressure switch can be assigned, which monitors the pressure in the interior of the pressure chamber and prevents failure to reach a minimum pressure that is applied to the semiconductor device to be tested high voltage , Such a pressure sensor or pressure switch can either be installed directly in the pressure chamber. In another embodiment, the pressure sensor or pressure switch can communicate with the interior of the pressure chamber via a line led out of the pressure chamber. Finally, within the scope of the invention, it is possible to arrange the pressure sensor or pressure switch in the supply line, via which pressurized gas (compressed air) is fed into the pressure chamber, so that the failure to reach a desired pressure or a pressure drop in the pressure chamber can also be detected here.
    Further details and features of the invention will become apparent from the following description with reference to the exemplary embodiments illustrated schematically. Show it:
    Fig. 1 shows a device of the generic type, as known from AT 412 175 B, Fig. 2 shows schematically the problem which is solved by the invention, Fig. 3 shows a first embodiment of a device according to the invention and Fig. 4 shows a second embodiment a device according to the invention.
    In the (known) device according to FIG. 1, a semiconductor wafer 5 is provided, in which a plurality of chips 10 are provided, but not yet separated from this semiconductor wafer 5, that is, they have not yet been broken out. Each chip 10 has shown schematically in FIG. 1, ····························································································. * * * * * »11 * 1 * · · ·· 4 *« ·· * * ·· * 6
    Contact surfaces 1 and 2. In order to test the chip 10, via a test needle 3, which is applied to the contact surface 1 of the chip, on the one hand and via an electrical contact 4 on the back of the chip and located in the chip structure, electrically conductive connection on the other , A test voltage applied by 4 electrical high voltage is applied via the test needle 3 and the contact.
    When high voltage is applied, it may, depending on the chip geometry and the height of the test voltage between the contact surfaces 1 and 2, as indicated in Fig. 2, come to unwanted flashovers 6 between contact surfaces 1 and 2 via the atmosphere (air).
    In other measurement arrangements, the high voltage may be applied only to the top of the chip for purposes of testing via contact pins 3, 3 '(as shown, for example, in Figure 3). In this case, high field strengths and thus the risk of flashovers occur not only between contact surfaces 1, 2 of the chip but also between the contact needles 3, 3 'themselves. Since, in one embodiment of the invention, the regions (e.g., tips) of the contact needles 3, 3 'are located within the pressure chamber 7 provided according to the invention, the device according to the invention can also prevent flashover between the needles.
    In the case of the device known from AT 412 175 B, a pressure chamber 7 is placed in position over the region of the semiconductor wafer 5 to be tested (the chip 10 to be tested), the interior 9 of which is subjected to pressure via a pressurized gas supply 8. The pressure chamber 7 is open to the chip surface. After placing the pressure chamber 7 on the semiconductor wafer 5 10 pressure is built up via the compressed gas supply 8 in the interior 9 of the pressure chamber 7 above the chip. ···· "· · · ·» · · # · * · · · • · B ft * ♦ ♦ · · · "" · ft · "" · · · · · · • ft "· · · 7
    In the embodiment of a device according to the invention shown in Fig. 3, the Druckkämmer 7 consists of two with the probe card 12 fixedly connected parts 11 and 11 ', wherein the parts 11 and 11' are arranged on opposite sides of the probe card 12. In the on the side facing away from the semiconductor wafer 5 to be tested side of the probe card 12 arranged part 11 of the pressure chamber 7, a gas supply 8 for the pressure chamber 7, which opens into the interior 9 of the pressure chamber 7, is provided. The on the semiconductor wafer 5 facing side of the probe card 12 disposed part 11 'of the pressure chamber 7 is attached to the probe card 12 via a ring 15 made of electrically insulating material. Through the ring 15 of electrically insulating material are the test needles 3 and 3 'for electrically contacting the chip 10, shown in FIG
    Embodiment is still in the semiconductor wafer 5, so it has not been broken out of this, out.
    In the embodiment shown in FIG. 3, the pressure chamber 7 further has at least one annular part 13, which is in the direction of the double arrow 16, opposite the parts 11 and 11 'of the pressure chamber 7 connected to the probe card 12, ie substantially perpendicular to the plane of the semiconductor wafer 5 and the probe card 12 is adjustable. Between the part 11 'of the pressure chamber 7, which is arranged on the semiconductor wafer 5 facing side of the probe card 12, and the movable part 13 of the pressure chamber 7 (at least) a spring (not shown) is provided which serves as the ring seal serving part 13th the pressure chamber 7 in the direction of the semiconductor wafer 5 charged.
    In the embodiment of a device according to the invention shown in FIG. 4, an air bearing is formed in the gap 14 between the movable part 13 and the semiconductor wafer 5, which is formed by pressurized air through the gap 14 between the movable part 13 and the * * • * t • · · 4 4 4 4 4 4 4 4 4 4 4 4 4 4
    Top of the semiconductor wafer 5 exits. By means of this air bearing, as explained above, it is achieved that the annular part 13 is held sealingly but at a distance from the upper side of the semiconductor wafer 5. The air bearing in the gap 14 is acted upon via an annular channel 19 (radially inwardly open groove in the part 13) and axially parallel channels 18 with compressed air. The channels 18 open into, e.g. circular, depressions in the semiconductor wafer 5 facing, annular end face of the movable part 13. These depressions are arranged evenly distributed over the end face of the part 13, for example. The compressed air can be removed from the interior 9 of the pressure chamber 7 or fed to the channel 19 via separate lines (not shown).
    In the embodiment of the device according to the invention shown in FIG. 3 and in the embodiment shown in FIG. 4, the interior 9 of the pressure chamber 7 is assigned a pressure sensor 17 (symbolized). As already mentioned above, the pressure sensor 17 can also be connected via a line to the interior 9 of the pressure chamber 7. However, the pressure sensor 17 (or an analogously acting pressure switch) can also be assigned to the gas supply 8. It is essential that the pressure sensor 17 or pressure switch detects the pressure in the interior 9 of the pressure chamber 7 and allows the application of the test voltage only when the prescribed minimum pressure, sufficient at the test voltage to prevent flashovers 6 (Fig.
    The monitoring of the pressure in the interior 9 of the pressure chamber 7 by means of a pressure sensor 17 or a pressure switch is particularly advantageous when using the device according to the invention in the automated testing of high volumes of semiconductor devices, since in any case it is ensured that the target pressure before the start of the high-voltage test in the Pressure chamber 7 always • • «* * ♦« · * ff · I • «tt '·» t • t ft * ·· «· ·· * 9 has actually been established.
    In the context of the invention, an embodiment of the device is considered, in which more than one pressure chamber 7 with movable part 13 (ring seal) are arranged on a probe card 12.
    With the device according to the invention, it is possible to subject a single semiconductor component {chip 10) or at the same time two or more semiconductor components to a high-voltage test.
    In summary, an embodiment of the invention can be described as follows.
    A device for avoiding flashovers during high-voltage testing of semiconductor components {chips 10) on semiconductor wafers 5 comprises a semiconductor wafer 5 sealingly deliverable pressure chamber 7 with a pressurized gas supply 8, so that the interior 9 of the pressure chamber 7 set under pressure and so the ignition voltage for a sparkover between contact surfaces 1, 2 is higher than the maximum test voltage to be applied. The pressure chamber 7 is connected to a needle card 12 with contact needles 3. The pressure chamber 7 has a movable part 13 which is movable relative to the needle card 12 connected parts 11 and 11 'of the pressure chamber 7. The movable part 13 of the pressure chamber 7 is held by an air bearing in the gap 14 between the pressure chamber 7 and the semiconductor wafer 5 sealingly spaced from the surface of the semiconductor wafer 5.
    权利要求:
    Claims (12)
    [1]
    «···· · · I · · # **» »II · 4 I» * · * · «· * > 2 Apparatus for electrically high-voltage testing of one, two or more semiconductor components (5) comprising a pressure chamber (7) whose interior (9) via a Compressed gas line (8) can be placed under pressure, characterized in that the pressure chamber (7) on a probe card (12) with test needles (3) is arranged, and that the pressure chamber (7) has at least one part (13), the relative to the probe card (12) is movable.
    [2]
    2. Apparatus according to claim 1, characterized in that the movable part (13) is designed as a ring seal.
    [3]
    3. Apparatus according to claim 1 or 2, characterized in that the part 13 of the pressure chamber (7) is substantially perpendicular to the plane of the probe card (12) and the semiconductor device to be tested (5) is movable.
    [4]
    4. Device according to one of claims 1 to 3, characterized in that the needle card (12) connected to the part of the pressure chamber (7) has two parts (11 and 11 ') arranged on opposite sides of the probe card (12) are.
    [5]
    5. Device according to one of claims 1 to 4, characterized in that at the semiconductor device to be tested (5) facing side of the probe card (12) arranged part (11 ') of the pressure chamber (7) on the probe card (12) via a ring (15) of electrically insulating material is arranged, and that the test needles (3) of the probe card (12) through the ring (15) are guided. m ««, «* * t t« i * * ft * * * »« k • * · »· *« I · «« · »* ·· t · * · 11
    [6]
    6. Device according to one of claims 1 to 5, characterized in that between the needle card (12) connected to the part (11 ') of the pressure chamber (7) and the movable part (13) of the pressure chamber (7) provided at least one spring is
    [7]
    7. Device according to one of claims 1 to 6, characterized in that between the semiconductor wafer (5) facing end face of the movable part (13) of the pressure chamber (7) and the semiconductor wafer (5) has a gap (14) in which a Air bearing is formed, is provided.
    [8]
    8. Device according to one of claims 1 to 7, characterized in that the pressure chamber (7) is associated with a device (17) for monitoring the pressure in the interior (9) of the pressure chamber (7).
    [9]
    9. Apparatus according to claim 8, characterized in that the device is a pressure switch or a pressure sensor (17).
    [10]
    10. Apparatus according to claim 8 or 9, characterized in that the means (17) for monitoring the pressure in the interior (9) of the pressure chamber (7) is associated directly.
    [11]
    11. Device according to one of claims 8 to 10, characterized in that the means (17) for monitoring the pressure in the interior (9) of the pressure chamber (7) with the interior (9) is connected via a line.
    [12]
    12. Device according to one of claims 8 to 11, characterized in that the means (17) for monitoring the pressure in the interior (9) of the pressure chamber (7) of the compressed gas supply (8) is associated.
    类似技术:
    公开号 | 公开日 | 专利标题
    AT511226B1|2013-03-15|DEVICE FOR HIGH VOLTAGE CHECKING OF SEMICONDUCTOR COMPONENTS
    DE112018001869T5|2019-12-19|PROBE SYSTEMS AND METHODS WITH ELECTRICAL CONTACT DETECTION
    EP2015087B1|2011-12-21|Device for testing electronic components, in particular ICs, with a sealing board arranged within a pressure test chamber
    DE112015001192T5|2016-12-01|Inspection system for device under test and method for operating an inspection system for device under test
    DE102007039728A1|2008-04-30|probe assembly
    DE112013000568B4|2021-05-20|Device for measuring the electrical resistance of a tire
    EP3025159B1|2021-03-03|Vertical probe card
    DE102017130372B4|2020-03-12|Contact device and method for testing a single electronic component using a contact device
    DE102015109022B4|2018-08-23|Modular measuring device for testing of test pieces by means of interface elements
    AT511058B1|2012-09-15|METHOD AND DEVICE FOR CHECKING PRESSURE SENSORS
    DE112015000700T5|2016-11-24|System and method for clamping a workpiece
    DE102014113362A1|2015-03-26|Contact arrangements and methods for detecting improper mechanical contacting of contact structures
    AT500263A1|2005-11-15|METHOD AND CIRCUIT FOR THE PROTECTION OF TEST CONTACTS IN HIGH-CIRCULAR MEASUREMENT OF SEMICONDUCTOR COMPONENTS
    WO2015185456A1|2015-12-10|Contact-making device and method for making electrical contact with a test object
    AT14209U1|2015-06-15|Device for the electrical testing of semiconductor devices
    EP3911961A1|2021-11-24|Device for testing components under elevated gas pressure
    AT412175B|2004-10-25|DEVICE FOR AVOIDING SPARK FLASHES IN THE HIGH VOLTAGE TESTING OF SEMICONDUCTOR COMPONENTS
    EP3015869B1|2017-02-22|Spring contact device
    AT517113B1|2016-11-15|probe card
    WO2020148227A1|2020-07-23|Probe card for tests under gas atmosphere
    DE102005059494A1|2007-06-14|Modulus
    AT515629A1|2015-10-15|probe card
    DE102014015191A1|2016-04-21|Device for monitoring an electric battery and method for mounting such a device
    DE102010062689A1|2012-06-14|Device for contacting contact surfaces of electronics of household appliance e.g. washing machine, has centering unit that aligns contact needle relative to contact surface of electronics after holder is positioned to target position
    DE202015104330U1|2016-08-19|Holder for holding down a board to be tested on a test adapter in a test arrangement
    同族专利:
    公开号 | 公开日
    US9291664B2|2016-03-22|
    AT511226B1|2013-03-15|
    US20140002118A1|2014-01-02|
    WO2012122578A1|2012-09-20|
    EP2659279A1|2013-11-06|
    EP2659279B1|2018-12-26|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    AT412175B|2002-04-12|2004-10-25|Rainer Dr Gaggl|DEVICE FOR AVOIDING SPARK FLASHES IN THE HIGH VOLTAGE TESTING OF SEMICONDUCTOR COMPONENTS|
    DE102006018474A1|2006-04-19|2007-10-25|Infineon Technologies Ag|Test device for semiconductor elements on a semiconductor wafer and a test method using the test device|WO2020148227A1|2019-01-14|2020-07-23|Rainer Gaggl|Probe card for tests under gas atmosphere|DE19630316A1|1996-07-26|1998-01-29|Siemens Ag|Electronic component contacting device for function testing|
    JP2006242860A|2005-03-04|2006-09-14|Oht Inc|Inspection device and inspection method|
    US7622935B2|2005-12-02|2009-11-24|Formfactor, Inc.|Probe card assembly with a mechanically decoupled wiring substrate|JP6289962B2|2013-07-11|2018-03-07|東京エレクトロン株式会社|Probe device|
    CN103389449B|2013-08-02|2016-04-06|昆山康佳电子有限公司|Automatic high pressure test macro|
    AT14209U1|2013-09-24|2015-06-15|T I P S Messtechnik Gmbh|Device for the electrical testing of semiconductor devices|
    JP6339345B2|2013-10-31|2018-06-06|三菱電機株式会社|Semiconductor evaluation apparatus and semiconductor evaluation method|
    AT14210U1|2014-01-20|2015-06-15|Rainer Dr Gaggl|Vertical Adel map|
    AT515629B1|2014-04-14|2020-07-15|Dr Gaggl Rainer|Needle card|
    JP6355588B2|2015-04-28|2018-07-11|三菱電機株式会社|Semiconductor inspection jig|
    US10675699B2|2015-12-10|2020-06-09|Illinois Tool Works Inc.|Systems, methods, and apparatus to preheat welding wire|
    TWI583963B|2016-04-18|2017-05-21|旺矽科技股份有限公司|Probe card|
    JP6905179B2|2017-03-23|2021-07-21|株式会社東京精密|Prober|
    JP2018160592A|2017-03-23|2018-10-11|株式会社東京精密|Prober|
    TWI613448B|2017-04-06|2018-02-01|致茂電子股份有限公司|Device for pressing electronic component with different downward forces|
    US11002761B2|2017-07-25|2021-05-11|Keithley Instruments, Llc|Probe card system for testing an integrated circuit|
    AT522017A1|2019-01-14|2020-07-15|Ing Dr Rainer Gaggl Dipl|Device for testing components|
    法律状态:
    2019-11-15| MM01| Lapse because of not paying annual fees|Effective date: 20190317 |
    优先权:
    申请号 | 申请日 | 专利标题
    ATA371/2011A|AT511226B1|2011-03-17|2011-03-17|DEVICE FOR HIGH VOLTAGE CHECKING OF SEMICONDUCTOR COMPONENTS|ATA371/2011A| AT511226B1|2011-03-17|2011-03-17|DEVICE FOR HIGH VOLTAGE CHECKING OF SEMICONDUCTOR COMPONENTS|
    US14/005,635| US9291664B2|2011-03-17|2012-03-12|Device for high voltage testing of semiconductor components|
    PCT/AT2012/000060| WO2012122578A1|2011-03-17|2012-03-12|Device for high voltage testing of semiconductor components|
    EP12714525.8A| EP2659279B1|2011-03-17|2012-03-12|Device for high voltage testing of semiconductor components|
    [返回顶部]